Semiconductors
r Density (g cm-3)
a Lattice parameter (nm)
Typically at 300 K
Disclaimer: Complied by averaging of data from a number of sources (© S.O. Kasap 1997). Please use with caution. Accuracy is not guaranteed and no liability is accepted.
| Semiconductor | Crystal | Density (g cm-3) |
a (nm) |
Comment |
| Ag2S | a-monoclinic | 7.23 | a
= 0.423 b =0.691 c = 0.787 b = 99o 35’ |
Stable form at RT |
| AlAs | ZB | 3.60; 3.76 | 0.5561 | |
| AlN | Wurt. | 3.225 | a
= 0.311 c = 0.498 |
|
| AlP | ZB | 2.40 | 0.5460-0.5464 | |
| AlSb | ZB | 4.26 | 0.6136 | |
| As | Rhom. | 5.72 | a
= 0.4132 a = 54.13° |
|
| As2Se3 | 4.75 | |||
| As2Te3 | 6.0 | 1.44 | ||
| B | a-rhom. | 2.45 | a
= 0.5057 a = 58.06° |
|
| B | b-rhom. | 2.32 | a
= 1.0145 a = 65.1° |
|
| BAs | ZB | 5.22 | 0.4777 | |
| Bi | Rhom. | 9.8 | a
= 0.4746 a = 57.2° |
|
| Bi2Te3 | 7.7 | 1.045 | ||
| BN | Hex. | 2.18 | a
= 0.6661 c = 0.2504 |
Hexagonal structure is the stable form |
| BP | ZB | 2.97 | 0.4538 | |
| C (Diamond) | Diamond | 3.515 | 0.3567 | |
| Cd2As3 | 6.21 | II-V | ||
| CdO | NaCl | 8.15 | 0.4689 | |
| CdS (Wurt.) | Wurt | 4.82 | a
= 0.4136 c = 0.6714 |
|
| CdS (ZB) | ZB | 4.82? | 0.583 | |
| CdSb | 6.92 | 0.647 | II-V | |
| CdSe | Wurt. | 5.81; 5.74 | a
= 0.43 c = 0.7011 |
|
| CdTe | ZB | 5.86;
5.87; 6.20 |
0.6482 | |
| GaAs | ZB | 5.318 | 0.5653 | |
| GaN | Wurt. | 6.09-6.1 | a
=0.3160- 0.3190 c = 0.5125-0.5190 |
|
| GaP | ZB | 4.14 | 0.5451 | |
| GaSb | ZB | 5.614 | 0.6096 | |
| Ge | Diam. | 5.32 | 0.5658 | |
| In2Se3 | 5.67 | III-VI | ||
| In2Te3 | 5.78 | 0.615 | III-VI | |
| InAs | ZB | 5.66 | 0.6058 | |
| InN | 6.81 | a
=0.3545 c = 0.5704 |
||
| InP | ZB | 4.80 | 0.5869 | |
| InSb | ZB | 5.77 | 0.6479 | |
| Mg2Si | 1.94 | 0.634 | II-IV | |
| Mg2Sn | 3.66 | 0.675 | II-IV | |
| P (Black) | Orthorhom. | 2.7 | a
= 0.313 b = 0.4374 c = 1.047 |
|
| PbS | NaCl | 7.59 | 0.5936 | |
| PbSe | NaCl | 8.10; 8.26; 8.73 | 0.6150 | |
| PbTe | NaCl | 8.2 | 0.646 | |
| PtSb2 | 0.643 | |||
| S (a-S) | Orthorhom. | 2.07 | a
= 1.046 b = 1.288 c = 2.448 |
|
| Sb | Rhom. | 6.69 | a
= 4507 a = 57.1° |
|
| Sb2Se3 | 5.81 | 1.168 | V-VI | |
| Sb2Te3 | 6.5 | |||
| Se (g-Se) | Trigonal | 4.82 | a
= 0.436 c = 0.495 |
|
| Si | Diam. | 2.33 | 0.543 | |
| Si3N4 | Amor. | 3.1 | — | Insulator in microelectronics |
| SiC (Cubic) | Cubic (ZB) | 3.17 | 0.4360 | |
| SiC (Hex.) | Hex. | 3.21 | a
= 0.3081 c = 1.5117 |
|
| SiO2 | Amor. | 2.27 | — | Insulator in microelectronics |
| Te | Trigonal | 6.25 | c
= 0.595 u = 0.0268 |
|
| Zn3As2 | 5.53 | |||
| ZnO | Wurt. | 5.675 | a
= 0.3253 c = 0.5213 |
|
| ZnS (Wurt.) | Wurt. | 4.087 | a
= 0.3822 c = 0.6260 |
Wurtzite form |
| ZnS (ZB) | ZB | 4.075 | 0.5410 | Cubic form |
| ZnSb | 6.33 | II-V | ||
| ZnSe (Wurt.) | Wurt. | 5.26; 5.27; 5.65 | a
= 0.4013 c = 0.654 |
|
| ZnSe (ZB) | ZB | 5.27 | 0.5266 | |
| ZnTe | ZB | 5.70; 5.51 | 0.6103 |